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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION *With TO-3PN package *Complement to type 2SC2665 APPLICATIONS *For general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -4 -1 55 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1135 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -80 V VCEsat ICBO Collector-emitter saturation voltage IC=-2A; IB=-0.2A VCB=-80V; IE=0 -1.0 V Collector cut-off current -1.0 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE DC current gain IC=-1A ; VCE=-4V 40 fT Transition frequency IE=0.2A ; VCE=-10V 10 MHz Switching times s s s tr tstg Rise time IC=-2A ; VCC=-6V IB1=-IB2=-0.3A;RL=3 1.0 Storage time 0.4 tf Fall time 0.15 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1135 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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